| PART |
Description |
Maker |
| PBMB50A6 |
IGBT MODULE H_Bridge 50A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| 7MBP50VDA060-50 |
IGBT MODULE (V series) 600V / 50A / IPM
|
Fuji Electric
|
| 7MBR50U2A060 |
IGBT MODULE (U series) 600V / 50A / PIM
|
Fuji Electric
|
| FFH50US60S |
50A, 600V StealthDiode 50 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
50A, 600V Stealth⑩ Diode
50A, 600V Stealth Diode
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| 6MBP50RA06 6MBP50RA060 |
IGBT-IPM(600V/50A)
|
FUJI[Fuji Electric]
|
| 7MBR50SB060 |
IGBT(600V/50A/PIM)
|
FUJI[Fuji Electric]
|
| 7MBR50SA060 |
IGBT(600V/50A/PIM)
|
FUJI[Fuji Electric]
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| RJH60D7DPQ-E0-T2 |
600V - 50A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJP60F7DPK RJP60F7DPK-00T0 |
600V - 50A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| STGY50NC60WD GY50NC60WD |
N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
